Development of GaN MOS-HEMTs Transistors Based Biosensors for the Detection of a Novel SARS-Cov-19 Virus

EasyChair Preprint no. 10815

Abstract

In this paper, the electrical biosensing device is modeled and analyzed for AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) based biosensors with different cavity heights. In this work, AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), with the cavity under the gate electrode is studied for its sensitivity analysis and viability as a biosensor. The analytical model has been developed to enhance the sensitivity of the electrical biosensing device, by using dielectric modulation approach with different cavity height (h_cavity). The analytical model results are in good agreement with Atlas-TCAD for output characteristics for the proposed cavity height h_cavity= (5, 7, 9, 11 and 13) nm. The maximum drain current on sensitivity which has been achieved in this work with h_cavity= 13 nm, while that better sensitivity with h_cavity= 5 nm shift up to 81.67%. The MOS-HEMTs transistors based biosensor structures proposed are simulated and analyzed by using commercially available Atlas-TCAD and compared with developed analytical model.

Keyphrases: AlGaN/GaN, Biosensors, Corona Virus, dielectric constant, MOS-HEMTs, SARS-CoV-2, sensitivity

@Booklet{EasyChair:10815,
  author = {Mouffoki Faiza and Bouguenna Driss},
  title = {Development of GaN MOS-HEMTs Transistors Based Biosensors for the Detection of a Novel SARS-Cov-19 Virus},
  howpublished = {EasyChair Preprint no. 10815},

  year = {EasyChair, 2023}}